Chemin:OKDatasheet > Fiche de Semi-conducteurs > ST Microelectronics Datasheet > MJD127-1
MJD127-1 spec: PNP darlington transistor for high DC current gain, 100V, 5A
MJD127-1 similaires
- MJD112
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD117
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122-1
- "NPN darlington transistor for high DC current gain, 100V, 5A"
- MJD122T4
- NPN darlington transistor for high DC current gain, 100V, 5A
- MJD127-1
- PNP darlington transistor for high DC current gain, 100V, 5A
- MJD127T4
- PNP darlington transistor for high DC current gain, 100V, 5A
MJD127-1 Datasheet et spécifications
Fabricant : ST Microelectronics
Emballage : TO-251
Pins : 3
Température : Min -65 °C | Max 150 °C
Taille : 100 KB
Application : PNP darlington transistor for high DC current gain, 100V, 5A
MJD127-1 PDF Download