STH6N100 similaires

STH60N10
- Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C
STH60N10FI
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6N100
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STH6N100FI
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STH6N100 Datasheet et spécifications

Emballage :

Pins : 0

Température : Min 0 °C | Max 0 °C

Taille : 222 KB

Application : N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS