Chemin:OKDatasheet > Fiche de Semi-conducteurs > TelCom Semiconductor Datasheet > TC1030EPD
TC1030EPD spec: Linear building block - quad low power operational amplifier.
TC1030EPD similaires
- TC1014-2.5VCT
- 50mA CMOS LDO with shutdown and reference bypass. Output voltage 2.5V.
- TC1014-2.7VCT
- 50mA CMOS LDO with shutdown and reference bypass. Output voltage 2.7V.
- TC1014-3.0VCT
- 50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.0V.
- TC1014-3.3VCT
- 50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.3V.
- TC1014-5.0VCT
- 50mA CMOS LDO with shutdown and reference bypass. Output voltage 5.0V.
- TC1015-2.5VCT
- 100mA CMOS LDO with shutdown and reference bypass. Output voltage 2.5V.
- TC1015-2.7VCT
- 100mA CMOS LDO with shutdown and reference bypass. Output voltage 2.7V.
- TC1015-3.0VCT
- 100mA CMOS LDO with shutdown and reference bypass. Output voltage 3.0 V.
TC1030EPD Datasheet et spécifications
Fabricant : TelCom Semiconductor
Emballage : Plastic DIP
Pins : 14
Température : Min -40 °C | Max 85 °C
Taille : 29 KB
Application : Linear building block - quad low power operational amplifier.
TC1030EPD PDF Download