Chemin:OKDatasheet > Fiche de Semi-conducteurs > Transys Electronics Datasheet > 1N5356B
1N5356B spec: 19 V, 0.5 A, 5 W, glass passivated junction silicon zener diode
1N5356B similaires
- 1N5348B
- 11 V, 5 A, 5 W, glass passivated junction silicon zener diode
- 1N5350B
- 13 V, 1 A, 5 W, glass passivated junction silicon zener diode
- 1N5352B
- 15 V, 1 A, 5 W, glass passivated junction silicon zener diode
- 1N5353B
- 16 V, 1 A, 5 W, glass passivated junction silicon zener diode
- 1N5354B
- 17 V, 0.5 A, 5 W, glass passivated junction silicon zener diode
- 1N5355B
- 18 V, 0.5 A, 5 W, glass passivated junction silicon zener diode
- 1N5356B
- 19 V, 0.5 A, 5 W, glass passivated junction silicon zener diode
- 1N5357B
- 20 V, 0.5 A, 5 W, glass passivated junction silicon zener diode
1N5356B Datasheet et spécifications
Fabricant : Transys Electronics
Emballage : DO-201AE
Pins : 2
Température : Min -55 °C | Max 150 °C
Taille : 293 KB
Application : 19 V, 0.5 A, 5 W, glass passivated junction silicon zener diode
1N5356B PDF Download