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Partie nApplication
28LV256JI-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
28LV64SC-4 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
28C256APC-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
TU25C256PI CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 4.5V to 5.5V.
TU25C128PC-2.7 CMOS SPI bus. 128K electrically erasable programmable ROM. 16K x 8 bit EEPROM. Voltage 2.7V to 5.5V.
28C64ATM-4 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
28C256ASC-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
29C010JI-3 High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns.
28LV64TI-3 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
28LV64JI-4 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
TU24C32CP3 CMOS IIC 2-wire bus. 32K electrically erasable programmable ROM. 4K x 8 bit EEPROM. Voltage 2.7V to 5.5V.
28C64API-2 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns.
28C256ATI-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
28C64ASM-4 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
28C64AJI-3 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
28C256ATI-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
28C256AJC-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
28C64ASC-4 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
28C64ATM-3 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
28LV256TI-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
28LV64SI-6 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns.
28LV64PM-5 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns.
28C64AJC-2 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns.
TU24C128CS3 CMOS IIC 2-wire bus. 128K electrically erasable programmable ROM. 16K x 8 bit EEPROM. Voltage 2.7V to 5.5V.
28C256AJC-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
28LV64JC-4 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
28C64ATI-4 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
28LV256PM-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.

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