MJE3055T similaires

  • MJE3055T
    • NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W.

MJE3055T Datasheet et spécifications

Fabricant : Usha 

Emballage : TO-220 

Pins : 3 

Température : Min -65 °C | Max 150 °C

Taille : 52 KB

Application : NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. 

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