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TIP35C similaires

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  • TIP35C
    • NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W.
  • TIP36A
    • PNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W.
  • TIP36B
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  • TIP36C
    • PNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W.

TIP35C Datasheet et spécifications

Fabricant : Usha 

Emballage : TO-218 

Pins : 3 

Température : Min -65 °C | Max 150 °C

Taille : 51 KB

Application : NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. 

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