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Pour trouver les Wing Shing International GroupFiche d'information, de recherche okDatasheet par le numéro de pièce ou élément de description. Vous seront présentés avec une liste de toutes les parties correspondant aux fiches WingShing. Cliquez sur une liste de composants électroniques pour voir plus de détails y compris les spécifications.
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| Partie n | Application |
|---|---|
| 1N5817 | Schottky barrier rectifier. Max recurrent peak reverse voltage 20V. Max RMS voltage 14V. Max DC blocking voltage 20V. Current 1.0A |
| 2SC2921 | NPN planar silicon transistor. Audio power amplifier, DC to DC converter |
| 1N5397 | Silicon rectifier. Max recurrent peak reverse voltage 600V. Max RMS voltage 420V. MAX DC blocking voltage 600V. Current 1.5A |
| BU407 | Silicon epitaxial planar transistor. High frequency, high power transistor for audio and general purpose. |
| 2SD235 | NPN epitaxial silicon transistor. Low frequency power amplifier. |
| FR103 | Fast recovery rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 200V. Maximum RMS voltage 140V. Maximum DC blocking voltage 200V. |
| MJ15002 | PNP planar silicon transistor. Audio power amplifier DC to DC converter |
| 2SB435 | PNP epitaxial silicon transistor. Low frequency power amplifier. |
| KBPC1506 | Single-phase silicon bridge rectifier. Current 15A. Maximum recurrent peak reverse voltage 600V. Maximum RMS voltage 420V. Maximum DC blocking voltage 600V |
| LM2931CT-5.0 | Low dropout regulator. Vout = 5V. |
| 2SD1432 | NPN tripple diffused planar silicin transistor. Color TV horizontal output applications(no damper diode) |
| MJ15004 | PNP planar silicon transistor. Audio power amplifier DC to DC converter |
| NE555M | Precision timer |
| 2SD1876 | NPN triple diffused planar silicon transistor. Color TV horizontal output applications(damper diode built in) |
| 1N5395 | Silicon rectifier. Max recurrent peak reverse voltage 400V. Max RMS voltage 280V. Max DC blocking voltage 400V. Current 1.5A |
| 1N5402 | Silicon rectifier. Max recurrent peak reverse voltage 200V. Max RMS voltage 140V. Max DC blocking voltage 200V. Current 3.0A |
| WS62256LLP | Very low power/volpage CMOS SRAM. 32K x 8 bit. Vcc 4.4V-5.5V. Speed 70ns |
| 2SC1050 | Silicon epitaxial planar transistor. NPN high frequency, high power, primarily for use in audio and general purpose |
| 2SC1827 | NPN epitaxial silicon transistor. Low frequency power amplifier. |
| MJ11017 | PNP silicon darlington transistor. Switching regulators. PWM inverters. Solenoid and relay drivers |
| S8050LT1 | Transistor(PNP). Power dissipation 0.3W, Collector current 0.5A. Collector-base voltage 40V |
| KBPC3506 | Single-phase silicon bridge rectifier. Current 35A. Maximum recurrent peak reverse voltage 600V. Maximum RMS bridge input voltage 420V. Maximum DC blocking voltage 600V |
| SMA5817 | Surface mount schottky barrier rectifier. Max reccurent peak reverse voltage 20V. Max RMS bridge input voltage 14V. Max DC blocking voltage 20V. |
| LM385Z-2.5 | Micropower voltage reference diode. Low voltage reference 2.5V |
| MJ10009 | NPN silicon transistor. Switching regulators. PWM inverters. Solenoid and relay drivers. |
| 2SD401 | Silicon epitaxial planar transistor. |
| WS2418 | Telephone tone ringer with bridge diode |
| TIP41C | NPN silicon power transistor. Medium power linear and switching applications Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 5V |
WingShing Profil
Wing Shing Electronic designs and manufactures a broad range of standard and application-specific components: Discrete Components Diodes Thyristors Transistors Integrated Circuits Analog and Mixed-Signal Circuit Peripheral Interface Storage