BU407 spec: Silicon epitaxial planar transistor. High frequency, high power transistor for audio and general purpose.

BU407 similaires

BU406
- NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.
BU406D
- NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 400V. Emitter-base voltage 6V.
BU406H
- NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.
BU407
- Silicon epitaxial planar transistor. High frequency, high power transistor for audio and general purpose.
BU408
- NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.

BU407 Datasheet et spécifications

Fabricant : WingShing

Emballage : TO-220

Pins : 3

Température : Min 0 °C | Max 0 °C

Taille : 70 KB

Application : Silicon epitaxial planar transistor. High frequency, high power transistor for audio and general purpose.