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BU406D similaires

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    • NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.
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BU406D Datasheet et spécifications

Fabricant : WingShing 

Emballage : TO-220 

Pins : 3 

Température : Min 0 °C | Max 0 °C

Taille : 24 KB

Application : NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 400V. Emitter-base voltage 6V. 

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