2SB1016 spec: PNP epitaxial silicon transistor. Power amplifier vertical defclection output.

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2SB1016
- PNP epitaxial silicon transistor. Power amplifier vertical defclection output.

2SB1016 Datasheet et spécifications

Fabricant : WingShing

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Pins : 3

Température : Min 0 °C | Max 0 °C

Taille : 75 KB

Application : PNP epitaxial silicon transistor. Power amplifier vertical defclection output.