WMBT3906 spec: PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A

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WMBT3906 Datasheet et spécifications

Fabricant : WingShing

Emballage : SOT-89

Pins : 3

Température : Min 0 °C | Max 0 °C

Taille : 72 KB

Application : PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A