Chemin:OKDatasheet > Fiche de Semi-conducteurs > EXICON Datasheet
Mot-clé: Datasheet EXICON, Data sheet EXICON, Data sheets EXICON, EXICON
Chemin:OKDatasheet > Fiche de Semi-conducteurs > EXICON Datasheet
Mot-clé: Datasheet EXICON, Data sheet EXICON, Data sheets EXICON, EXICON
Pour trouver les EXICONFiche d'information, de recherche okDatasheet par le numéro de pièce ou élément de description. Vous seront présentés avec une liste de toutes les parties correspondant aux fiches EXICON. Cliquez sur une liste de composants électroniques pour voir plus de détails y compris les spécifications.
EXICON site officiel
Partie n | Application |
---|---|
EC-10P20 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. |
ECM-300H | 300W RMS class D audio amplifier module. |
EC-10P20 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. |
EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. |
EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. |
EC-10P16 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. |
ECF10P25 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 250V. Storage temperature range. |
EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. |
EC-20P16 | P-channel lateral MOSFET. High power 250 W. Drain-source voltage 160V. Storage temperature range. |
EC-20P20 | P-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range. |
ECM-600H | 600W RMS class D audio amplifier module. |
EC-20N20 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range. |
EC-20P20 | P-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range. |
EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. |
EC-10P20 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. |
EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. |
EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. |
EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. |
ECF10N25 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 250V. Storage temperature range. |
EC-20N20 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range. |
EC-20N16 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 160V. Storage temperature range. |
EC-10P16 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. |
EC-20N16 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 160V. Storage temperature range. |
EXICON