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R16MBV IRF9Z24L IRGPH40M SD150N16MBV 301U160 IRFB9N65A ST303C04CHK2L 45L5 ST173S12MFK2 SD233N45S50MSC IRFPC50LC ST333S04MFM0L SD103R25S20MC 307UR160P4 IRGPC40UD2 ST1200C16K0L SD200R24PBC CPV362MF ST333C04LHK1L IRF5305S 303URA120P4 ST2600C20R1 IRG4BC20MD SD703C12S20L ST230S12P2V S
Partie n | Fabricant | Application |
---|---|---|
SD453N20S30MSC | IR | Fast recovery diode |
SD150R16MBV | IR | Standard recovery diode |
IRF9Z24L | IR | HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -11A |
IRGPH40M | IR | Insulated gate bipolar transistor |
SD150N16MBV | IR | Standard recovery diode |
301U160 | IR | Standard recovery diode |
IRFB9N65A | IR | HEXFET power MOSFET. VDSS = 650V, RDS(on) = 0.93 Ohm, ID = 8.5A |
ST303C04CHK2L | IR | Inverter grade thyristor |
45L5 | IR | Standard recovery diode |
ST173S12MFK2 | IR | Inverter grade thyristor |
SD233N45S50MSC | IR | Fast recovery diode |
IRFPC50LC | IR | HEXFET power mosfet |
ST333S04MFM0L | IR | Inverter grade thyristor |
SD103R25S20MC | IR | Fast recovery diode |
307UR160P4 | IR | Standard recovery diode |
IRGPC40UD2 | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode |
ST1200C16K0L | IR | Phase control thyristor |
SD200R24PBC | IR | Standard recovery diode |
CPV362MF | IR | IGBT SIP module |
ST333C04LHK1L | IR | Inverter grade thyristor |
IRF5305S | IR | Power MOSFET, 55V, 31A |
303URA120P4 | IR | Standard recovery diode |
ST2600C20R1 | IR | Phase control thyristor |
IRG4BC20MD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A |
SD703C12S20L | IR | Fast recovery diode |
ST230S12P2V | IR | Phase control thyristor |
SD103N10S10MC | IR | Fast recovery diode |
180RKI80S90 | IR | Phase control thyristor |
ST1900C52R1 | IR | Phase control thyristor |
ST380C04C2 | IR | Phase control thyristor |