| Partie n | Fabricant | Application |
|---|
| IRF7103Q | IR | N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A |
| SD453R12S20MTC | IR | Fast recovery diode |
| IRGPH30MD2 | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode |
| IRFSL31N20D | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.082 Ohm, ID = 31A |
| SD203N25S20PSC | IR | Fast recovery diode |
| 70U80 | IR | Standard recovery diode |
| ST1200C18K2L | IR | Phase control thyristor |
| IRFR120N | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A |
| ST1200C12K2L | IR | Phase control thyristor |
| ST330S16P0 | IR | Phase control thyristor |
| SD200N04PC | IR | Standard recovery diode |
| IRF3706S | IR | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 8.5 mOhm, ID = 77A |
| 303UR160P4 | IR | Standard recovery diode |
| 200HF80PBV | IR | Standard recovery diode |
| ST180C18C3 | IR | Phase control thyristor |
| ST230S16M2L | IR | Phase control thyristor |
| IRFP250N | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.075 Ohm, ID = 30A |
| ST303S04MFN3L | IR | Inverter grade thyristor |
| SD153N16S15MV | IR | Fast recovery diode |
| SD253N08S20PBV | IR | Fast recovery diode |
| SD233N30S50PC | IR | Fast recovery diode |
| SD233R36S50PTC | IR | Fast recovery diode |
| 305U80P2 | IR | Standard recovery diode |
| 301URA200 | IR | Standard recovery diode |
| IRL620 | IR | HEXFET power mosfet |
| 302UR5A | IR | Standard recovery diode |
| ST180S04P1L | IR | Phase control thyristor |
| 303URA80P4 | IR | Standard recovery diode |
| IRF460 | IR | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A |
| SD300R20MC | IR | Standard recovery diode |
