| Partie n | Fabricant | Application |
|---|
| SD150R04MC | IR | Standard recovery diode |
| IRFU9024 | IR | HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -8.8A |
| 303UA160 | IR | Standard recovery diode |
| SD203R16S20PV | IR | Fast recovery diode |
| IRF440 | IR | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A |
| ST183S04PFN2L | IR | Inverter grade thyristor |
| SD203R16S10MV | IR | Fast recovery diode |
| ST183C04CHK0L | IR | Inverter grade thyristor |
| IRF7401 | IR | N-channel power MOSFET, 20V, 10A |
| SD103R20S15MSC | IR | Fast recovery diode |
| SD103R12S20MBC | IR | Fast recovery diode |
| SD253N08S15PSV | IR | Fast recovery diode |
| ST303S12PFN0 | IR | Inverter grade thyristor |
| IRGBC30M | IR | Insulated gate bipolar transistor |
| SD103R12S10PSC | IR | Fast recovery diode |
| IRSF3010 | IR | Fully protected power mosfet switch |
| ST733C08LHK2L | IR | Inverter grade thyristor |
| SD300N08PC | IR | Standard recovery diode |
| ST280S06M2V | IR | Phase control thyristor |
| ST230S12M0VL | IR | Phase control thyristor |
| 303UA80 | IR | Standard recovery diode |
| IRG4BC40U | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A |
| ST180S08M0 | IR | Phase control thyristor |
| 45LFR80 | IR | Standard recovery diode |
| IRU1206-33CY | IR | 1A very low dropout positive fixed 3.3V regulator |
| ST300C12L2L | IR | Phase control thyristor |
| IRFI744G | IR | HEXFET power MOSFET. VDSS = 450V, RDS(on) = 0.63 Ohm, ID = 4.9 A |
| ST330C08L1L | IR | Phase control thyristor |
| 70UF160PD | IR | Standard recovery diode |
| ST303C10HK3L | IR | Inverter grade thyristor |
