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IRFB9N60A spec: HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A
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IRFB9N60A Datasheet et spécifications
Fabricant : IR
Emballage :
Pins : 3
Température : Min -55 °C | Max 150 °C
Taille : 148 KB
Application : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A
IRFB9N60A PDF Download