IRFIB5N65A spec: HEXFET power MOSFET. VDSS = 650V, RDS(on) = 0.93 Ohm, ID = 5.1 A

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IRFIB5N65A Datasheet et spécifications

Fabricant : IR

Emballage : TO-220 FULLPAK

Pins : 3

Température : Min -55 °C | Max 150 °C

Taille : 113 KB

Application : HEXFET power MOSFET. VDSS = 650V, RDS(on) = 0.93 Ohm, ID = 5.1 A