| Partie n | Fabricant | Application |
|---|
| HER204G | Leshan Radio | 300 V, 2 A, high efficiency GPP diode |
| MMUN2213RLT1 | Leshan Radio | 50 V, bias resistor transistor |
| 1N5399 | Leshan Radio | 1000 V, 1.5 A general diode |
| 1N4948 | Leshan Radio | 1000 V, 1 A, fast GPP diode |
| SMAJ85A | Leshan Radio | 85 V, 1 mA, transient voltage suppressor |
| 05WS11A | Leshan Radio | 400 mW, 5 mA, zener diode |
| 1N5406G | Leshan Radio | 1000 V, 3 A, general purpose GPP diode |
| P4KE7.5A | Leshan Radio | 7.5 V, 10 mA, 400 W, transient voltage suppressor |
| BA157G | Leshan Radio | 400 V, 1 A, fast GPP diode |
| MMUN2234LT1 | Leshan Radio | 50 V, bias resistor transistor |
| MTZJ18A | Leshan Radio | 18 V, 5 mA, zener diode |
| 1N4733A | Leshan Radio | 5.1 V, zener diode |
| RC202 | Leshan Radio | 100 V, 2 A, WOM bridge rectifier |
| 1N4747B | Leshan Radio | 20 V, zener diode |
| 1N971B | Leshan Radio | 27 V, zener diode |
| MMBZ5241BLT1 | Leshan Radio | 11 V, 20 mA, 225 mW, semiconductor |
| 1.5KE10A | Leshan Radio | 10 V, 1 mA, 1500 W, transient voltage suppressor |
| BZX84C6V8LT1 | Leshan Radio | 6.8 V, 225 mW, semiconductor |
| FR253 | Leshan Radio | 200 V, 2.5 A, fast recovery diode |
| MMBZ5263BLT1 | Leshan Radio | 56 V, 2.3 mA, 225 mW, semiconductor |
| DTD143ES | Leshan Radio | 50 V, digital transistor |
| HER205G | Leshan Radio | 400 V, 2 A, high efficiency GPP diode |
| MMBD1010LT1 | Leshan Radio | 45 V, low saturation voltage |
| SA7.5 | Leshan Radio | 7.5 V, 1 mA, 500 W, transient voltage suppressor |
| 1N5250D | Leshan Radio | 20 V, 6.2 mA, zener diode |
| KBU605 | Leshan Radio | 600 V, 6 A, bridge rectifier |
| 1N5225D | Leshan Radio | 3.0 V, 20 mA, zener diode |
| 05WS6C | Leshan Radio | 400 mW, 5 mA, zener diode |
| 05WS24 | Leshan Radio | 400 mW, 2 mA, zener diode |
| MSC2295-BT1 | Leshan Radio | 30 V, NPN RF amplifier transistor surface mount |
