| Partie n | Fabricant | Application |
|---|
| 1N4736B | Leshan Radio | 6.8 V, zener diode |
| MUN2113T1 | Leshan Radio | 50 V, bias resistor transistor |
| SA14A | Leshan Radio | 14 V, 1 mA, 500 W, transient voltage suppressor |
| 1N971A | Leshan Radio | 27 V, zener diode |
| W02 | Leshan Radio | 200 V, 1.5 A, WOM bridge rectifier |
| 1SS133 | Leshan Radio | 90 V, switching diode |
| 1N5393G | Leshan Radio | 200 V, 1.5 A, general purpose GPP diode |
| 1N759D | Leshan Radio | 12 V, 20 mA, zener diode |
| SMAJ75A | Leshan Radio | 75 V, 1 mA, transient voltage suppressor |
| 1N755B | Leshan Radio | 7.5 V, 20 mA, zener diode |
| BB182B | Leshan Radio | 34 V, VHF variable capacitance diode |
| MMBV2109LT1 | Leshan Radio | 30 V, silicon tuning diode |
| 1S1555 | Leshan Radio | 35 V, switching diode |
| KBL407 | Leshan Radio | 1000 V, 4 A, bridge rectifier |
| 05W1C | Leshan Radio | 500 mW, 5 mA, zener diode |
| 1N5262D | Leshan Radio | 51 V, 2.5 mA, zener diode |
| BC847ALT1 | Leshan Radio | 45 V, general purpose transistor |
| 1N756B | Leshan Radio | 8.2 V, 20 mA, zener diode |
| 1N974C | Leshan Radio | 36 V, zener diode |
| 1N5402G | Leshan Radio | 200 V, 3 A, general purpose GPP diode |
| MMBZ5225BLT1 | Leshan Radio | 3 V, 20 mA, 225 mW, semiconductor |
| MM3Z3V6T1 | Leshan Radio | 3.6 V, 5 mA, 200 mW, zener voltage regulator |
| 1N757B | Leshan Radio | 9.1 V, 20 mA, zener diode |
| 1N5235C | Leshan Radio | 6.8 V, 20 mA, zener diode |
| 1N5402 | Leshan Radio | 200 V, 3 A general diode |
| P6KE36 | Leshan Radio | 36 V, 1 mA, 600 W, transient voltage suppressor |
| EFM104 | Leshan Radio | 200 V, 1 A, fast recovery SMA diode |
| HER207 | Leshan Radio | 800 V, 2 A, high efficiency diode |
| 1N964A | Leshan Radio | 13 V, zener diode |
| P4KE180 | Leshan Radio | 180 V, 1 mA, 400 W, transient voltage suppressor |
