| Partie n | Fabricant | Application |
|---|
| 05WS2C | Leshan Radio | 400 mW, 5 mA, zener diode |
| 1N4936 | Leshan Radio | 400 V, 1 A, fast recovery diode |
| DF08 | Leshan Radio | 800 V, 1 A, bridge rectifier |
| RC205 | Leshan Radio | 600 V, 2 A, WOM bridge rectifier |
| MTZJ36C | Leshan Radio | 36 V, 5 mA, zener diode |
| MUN5135T1 | Leshan Radio | 50 V, bias resistor transistor |
| MMBZ5224BLT1 | Leshan Radio | 2.8 V, 20 mA, 225 mW, semiconductor |
| BCW30LT1 | Leshan Radio | 32 V, general purpose transistor |
| MUN2130T1 | Leshan Radio | 50 V, bias resistor transistor |
| 1.5KE75A | Leshan Radio | 75 V, 1 mA, 1500 W, transient voltage suppressor |
| P6KE9.1 | Leshan Radio | 9.1 V, 1 mA, 600 W, transient voltage suppressor |
| MC74VHC1GT86DFT4 | Leshan Radio | 2-input exclusive OR gate |
| 1N5238D | Leshan Radio | 8.7 V, 20 mA, zener diode |
| 1N5236D | Leshan Radio | 7.5 V, 20 mA, zener diode |
| SMAJ28 | Leshan Radio | 28 V, 1 mA, transient voltage suppressor |
| 1N5248D | Leshan Radio | 18 V, 7.0 mA, zener diode |
| MMUN2231LT1 | Leshan Radio | 50 V, bias resistor transistor |
| MMBZ5236BLT1 | Leshan Radio | 7.5 V, 20 mA, 225 mW, semiconductor |
| MMBZ5244BLT1 | Leshan Radio | 14 V, 9 mA, 225 mW, semiconductor |
| SA8.0 | Leshan Radio | 8.0 V, 1 mA, 500 W, transient voltage suppressor |
| MMBD101LT1 | Leshan Radio | 7 V, schottky barrier diode |
| HER304G | Leshan Radio | 300 V, 3 A, high efficiency GPP diode |
| MV2101 | Leshan Radio | 30 V, silicon tuning diode |
| RB159 | Leshan Radio | 1000 V, 1.5 A, bridge rectifier |
| 1N5249C | Leshan Radio | 19 V, 6.6 mA, zener diode |
| RL153G | Leshan Radio | 200 V, 1.5 A general purpose diode |
| 1.5KE6.8A | Leshan Radio | 6.8 V, 10 mA, 1500 W, transient voltage suppressor |
| 1N4756A | Leshan Radio | 47 V, zener diode |
| 1N5243B | Leshan Radio | 13 V, 9.5 mA, zener diode |
| BC849ALT1 | Leshan Radio | 30 V, general purpose transistor |
