| Partie n | Fabricant | Application |
|---|
| P6KE18 | Leshan Radio | 18 V, 1 mA, 600 W, transient voltage suppressor |
| MC74VHC1G03DFT4 | Leshan Radio | 2-input NAND gate |
| D15SB60 | Leshan Radio | 600 V, 15 A, bridge rectifier |
| 1N751D | Leshan Radio | 5.1 V, 20 mA, zener diode |
| MTZJ13C | Leshan Radio | 13 V, 5 mA, zener diode |
| MUN2130RT1 | Leshan Radio | 50 V, bias resistor transistor |
| MMBZ5266BLT1 | Leshan Radio | 68 V, 1.8 mA, 225 mW, semiconductor |
| MTZJ4.7C | Leshan Radio | 4.7 V, 5 mA, zener diode |
| MC74VHC1G07DFT1 | Leshan Radio | Noninverting buffer with open drain output |
| MMBZ5230BLT1 | Leshan Radio | 4.7 V, 20 mA, 225 mW, semiconductor |
| 1N5405G | Leshan Radio | 800 V, 3 A, general purpose GPP diode |
| MMBZ5233BLT1 | Leshan Radio | 6 V, 20 mA, 225 mW, semiconductor |
| DTA115EUA | Leshan Radio | 50 V, digital transistor |
| MMBZ5235BLT1 | Leshan Radio | 6.8 V, 20 mA, 225 mW, semiconductor |
| DB-3 | Leshan Radio | 2 A, glass-sealed BI-directional trigger diode |
| SMAJ30 | Leshan Radio | 30 V, 1 mA, transient voltage suppressor |
| MMBZ5260BLT1 | Leshan Radio | 43 V, 3.0 mA, 225 mW, semiconductor |
| SA130 | Leshan Radio | 130 V, 1 mA, 500 W, transient voltage suppressor |
| 1N5236A | Leshan Radio | 7.5 V, 20 mA, zener diode |
| HVU202B | Leshan Radio | 35 V, variable capacitance diode |
| BC817-40LT1 | Leshan Radio | 45 V, general purpose transistor |
| P4KE82A | Leshan Radio | 82 V, 1 mA, 400 W, transient voltage suppressor |
| MUN5332DW1T1 | Leshan Radio | 50 V, dual bias resistor transistor |
| RB204S | Leshan Radio | 400 V, 2 A, bridge rectifier |
| MMBT2484LT1 | Leshan Radio | 60 V, low noise transistor |
| MMUN2130RLT1 | Leshan Radio | 50 V, bias resistor transistor |
| 1N5231B | Leshan Radio | 5.1 V, 20 mA, zener diode |
| BR305 | Leshan Radio | 50 V, 3 A, bridge rectifier |
| MTZJ24A | Leshan Radio | 24 V, 5 mA, zener diode |
| RC206 | Leshan Radio | 800 V, 2 A, WOM bridge rectifier |
