| Partie n | Fabricant | Application |
|---|
| MC74VHC1GT00DTT1 | Leshan Radio | 2-input NAND gate |
| MUN5315DW1T1 | Leshan Radio | 50 V, dual bias resistor transistor |
| MTZJ20A | Leshan Radio | 20 V, 5 mA, zener diode |
| MSB710-RT1 | Leshan Radio | 60 V, PNP general purpose amplifier transistor surface mount |
| 05W3C | Leshan Radio | 500 mW, 5 mA, zener diode |
| 1N5228B | Leshan Radio | 3.9 V, 20 mA, zener diode |
| MTZJ3.0A | Leshan Radio | 3.0 V, 5 mA, zener diode |
| SMAJ51 | Leshan Radio | 51 V, 1 mA, transient voltage suppressor |
| 1N968C | Leshan Radio | 20 V, zener diode |
| P4KE56A | Leshan Radio | 56 V, 1 mA, 400 W, transient voltage suppressor |
| 1N5233A | Leshan Radio | 6 V, 20 mA, zener diode |
| BAP50-02 | Leshan Radio | 50 V, general purpose PIN diode |
| MSD601-RT1 | Leshan Radio | 60 V, NPN general purpose amplifier transistor surface mount |
| MM3Z11T1 | Leshan Radio | 11 V, 5 mA, 200 mW, zener voltage regulator |
| SMAJ40 | Leshan Radio | 40 V, 1 mA, transient voltage suppressor |
| HVU306A | Leshan Radio | 32 V, variable capacitance diode |
| SMAJ170A | Leshan Radio | 170 V, 1 mA, transient voltage suppressor |
| MMBZ5256BLT1 | Leshan Radio | 30 V, 4.2 mA, 225 mW, semiconductor |
| 1N972A | Leshan Radio | 30 V, zener diode |
| MMBT6520LT1 | Leshan Radio | 350 V, high voltage transistor |
| 1N5231B | Leshan Radio | 5.1 V, 20 mA, zener diode |
| MTZJ6.8C | Leshan Radio | 6.8 V, 5 mA, zener diode |
| 1N5241D | Leshan Radio | 11 V, 20 mA, zener diode |
| 05WS5B | Leshan Radio | 400 mW, 5 mA, zener diode |
| BCW72LT1 | Leshan Radio | 45 V, general purpose transistor |
| MMUN2212LT1 | Leshan Radio | 50 V, bias resistor transistor |
| 1N5239D | Leshan Radio | 9.1 V, 20 mA, zener diode |
| R3000F | Leshan Radio | 3000 V, 0.2 A high voltage fast recovery diode |
| 1N4003 | Leshan Radio | 200 V, 1 A general diode |
| MMBZ5231BLT1 | Leshan Radio | 5.1 V, 20 mA, 225 mW, semiconductor |
