| Partie n | Fabricant | Application |
|---|
| BZX84C3V3LT1 | Leshan Radio | 3.3 V, 225 mW, semiconductor |
| MV2106 | Leshan Radio | 30 V, silicon tuning diode |
| 1N965B | Leshan Radio | 15 V, zener diode |
| SMAJ48 | Leshan Radio | 48 V, 1 mA, transient voltage suppressor |
| RL152 | Leshan Radio | 100 V, 1.5 A general diode |
| DTC123EKA | Leshan Radio | 50 V, digital transistor |
| 1N984A | Leshan Radio | 91 V, zener diode |
| 1N5258D | Leshan Radio | 36 V, 3.4 mA, zener diode |
| MUN5131D1WT1 | Leshan Radio | 50 V, dual bias resistor transistor |
| MMUN2216LT1 | Leshan Radio | 50 V, bias resistor transistor |
| MTZJ11A | Leshan Radio | 11 V, 5 mA, zener diode |
| HER306 | Leshan Radio | 600 V, 3 A, high efficiency diode |
| 1N958A | Leshan Radio | 7.5 V, zener diode |
| HER203G | Leshan Radio | 200 V, 2 A, high efficiency GPP diode |
| 1N5395G | Leshan Radio | 400 V, 1.5 A, general purpose GPP diode |
| SMAJ64A | Leshan Radio | 64 V, 1 mA, transient voltage suppressor |
| FR301 | Leshan Radio | 50 V, 3 A fast recovery diode |
| MC74VHC1G03DFT2 | Leshan Radio | 2-input NAND gate |
| 1N750A | Leshan Radio | 4.7 V, 20 mA, zener diode |
| HER201G | Leshan Radio | 50 V, 2 A, high efficiency GPP diode |
| 1N4934 | Leshan Radio | 100 V, 1 A, fast recovery diode |
| FR301G | Leshan Radio | 50 V, 3 A, fast GPP diode |
| 05WS1C | Leshan Radio | 400 mW, 5 mA, zener diode |
| RB159S | Leshan Radio | 1000 V, 1.5 A, bridge rectifier |
| SMAJ48A | Leshan Radio | 48 V, 1 mA, transient voltage suppressor |
| SMAJ9.0 | Leshan Radio | 9.0 V, 1 mA, transient voltage suppressor |
| MBV109T1 | Leshan Radio | 30 V, silicon epicap diode |
| 1.5KE43A | Leshan Radio | 43 V, 1 mA, 1500 W, transient voltage suppressor |
| SA48 | Leshan Radio | 48 V, 1 mA, 500 W, transient voltage suppressor |
| P4KE220A | Leshan Radio | 220 V, 1 mA, 400 W, transient voltage suppressor |
