BC262 similaires

  • BC261
    • 360mW PNP high gain low noise silicon planar epitaxial transistor
  • BC262
    • 360mW PNP high gain low noise silicon planar epitaxial transistor
  • BC263
    • 360mW PNP high gain low noise silicon planar epitaxial transistor

BC262 Datasheet et spécifications

Fabricant : Micro Electronics 

Emballage : TO-18 

Pins : 3 

Température : Min -65 °C | Max 200 °C

Taille : 103 KB

Application : 360mW PNP high gain low noise silicon planar epitaxial transistor 

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