MGW12N120 similaires

  • MGW12N120
    • Insulated Gate Bipolar Transistor N-Channel
  • MGW12N120D
    • Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
  • MGW14N60ED
    • Insulated Gate Bipolar Transistor

MGW12N120 Datasheet et spécifications

Fabricant : ON Semiconductor 

Emballage : TO-247 

Pins : 3 

Température : Min 0 °C | Max 0 °C

Taille : 149 KB

Application : Insulated Gate Bipolar Transistor N-Channel 

MGW12N120 PDF Download