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MGW12N120D spec: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGW12N120D similaires
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MGW12N120D Datasheet et spécifications
Fabricant : ON Semiconductor
Emballage : TO-247
Pins : 3
Température : Min 0 °C | Max 0 °C
Taille : 184 KB
Application : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGW12N120D PDF Download