VTP8350 spec: Process photodiode. Isc = 80 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K.

VTP8350 similaires

VTP8350
- Process photodiode. Isc = 80 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K.
VTP8440
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VTP8551
- Process photodiode. Isc = 70 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K.
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VTP8350 Datasheet et spécifications

Fabricant : PerkinElmer

Emballage : Ceramic

Pins : 2

Température : Min -20 °C | Max 75 °C

Taille : 28 KB

Application : Process photodiode. Isc = 80 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K.