VTP8551 spec: Process photodiode. Isc = 70 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K.

VTP8551 similaires

VTP8350
- Process photodiode. Isc = 80 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K.
VTP8440
- "Process photodiode. Isc = 55 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K."
VTP8551
- Process photodiode. Isc = 70 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K.
VTP8651
- Process photodiode. Isc = 55 microA(typ), Voc = 300 mV at H = 100 fc, 2850 K.

VTP8551 Datasheet et spécifications

Fabricant : PerkinElmer

Emballage : Mini DIP

Pins : 2

Température : Min -40 °C | Max 85 °C

Taille : 28 KB

Application : Process photodiode. Isc = 70 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K.