F1001C spec: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1001C similaires

F1001
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F1001C
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1003
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F1004
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F1005
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F1006
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F1007
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F1001C Datasheet et spécifications

Fabricant : Polyfet RF

Emballage :

Pins : 6

Température : Min -65 °C | Max 150 °C

Taille : 36 KB

Application : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor