F1007 spec: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

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- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1007 Datasheet et spécifications

Fabricant : Polyfet RF

Emballage :

Pins : 4

Température : Min -65 °C | Max 150 °C

Taille : 41 KB

Application : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor