F1170 spec: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1170 similaires

F1170
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1174
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1170 Datasheet et spécifications

Fabricant : Polyfet RF

Emballage :

Pins : 4

Température : Min -65 °C | Max 150 °C

Taille : 47 KB

Application : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor