F1174 spec: 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1174 similaires

F1170
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1174
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1174 Datasheet et spécifications

Fabricant : Polyfet RF

Emballage :

Pins : 4

Température : Min -65 °C | Max 150 °C

Taille : 49 KB

Application : 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor