F1208 spec: 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1208 similaires

F1206
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F1207
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F1208
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
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F1208 Datasheet et spécifications

Fabricant : Polyfet RF

Emballage :

Pins : 4

Température : Min -65 °C | Max 150 °C

Taille : 41 KB

Application : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor