F1209 spec: 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1209 similaires

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F1209
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1209 Datasheet et spécifications

Fabricant : Polyfet RF

Emballage :

Pins : 8

Température : Min -65 °C | Max 150 °C

Taille : 39 KB

Application : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor