F1410 spec: 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1410 similaires

F1410
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1415
- 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1410 Datasheet et spécifications

Fabricant : Polyfet RF

Emballage :

Pins : 6

Température : Min -65 °C | Max 150 °C

Taille : 39 KB

Application : 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor