F1415 spec: 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1415 similaires

F1410
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1415
- 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1415 Datasheet et spécifications

Fabricant : Polyfet RF

Emballage :

Pins : 4

Température : Min -65 °C | Max 150 °C

Taille : 42 KB

Application : 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor