okDatasheet.com

F2001 similaires

  • F2001
    • 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2002
    • 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2004
    • 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2001 Datasheet et spécifications

Fabricant : Polyfet RF 

Emballage :  

Pins : 2 

Température : Min -65 °C | Max 150 °C

Taille : 40 KB

Application : 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F2001 PDF Download