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F2002 similaires

  • F2001
    • 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2002
    • 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2004
    • 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2002 Datasheet et spécifications

Fabricant : Polyfet RF 

Emballage :  

Pins : 2 

Température : Min -65 °C | Max 150 °C

Taille : 40 KB

Application : 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

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