28C256ASI-1 similaires

  • 28C256ASI-1
    • High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
  • 28C256APC-1
    • High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
  • 28C256ATM-4
    • High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
  • 28C256ASI-3
    • High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
  • 28C256AJM-4
    • High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
  • 28C256API-3
    • High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
  • 28C256APC-2
    • High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
  • 28C256ATI-1
    • High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.

28C256ASI-1 Datasheet et spécifications

Fabricant : Turbo IC 

Emballage : SOIC 

Pins : 28 

Température : Min -40 °C | Max 85 °C

Taille : 45 KB

Application : High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. 

28C256ASI-1 PDF Download