28LV256SM-3 similaires

  • 28LV256PC-3
    • Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
  • 28LV64TM-3
    • Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
  • 28LV256SI-3
    • Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
  • 28LV64JM-5
    • Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns.
  • 28LV64TI-6
    • Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns.
  • 28LV256TM-4
    • Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
  • 28LV256SM-6
    • Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
  • 28LV256PI-5
    • Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.

28LV256SM-3 Datasheet et spécifications

Fabricant : Turbo IC 

Emballage : SOIC 

Pins : 28 

Température : Min -55 °C | Max 125 °C

Taille : 45 KB

Application : Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. 

28LV256SM-3 PDF Download