| Partie n | Fabricant | Application |
|---|
| ST223S04MFN1 | IR | Inverter grade thyristor |
| SD233N36S50PTC | IR | Fast recovery diode |
| SD400N12MBC | IR | Standard recovery diode |
| IRFPE30 | IR | HEXFET power MOSFET. VDSS = 800 V, RDS(on) = 3.0 Ohm, ID = 4.1 A |
| 305URA80P5 | IR | Standard recovery diode |
| ST2100C42R2L | IR | Phase control thyristor |
| IRFBC40A | IR | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A |
| SD153R16S10PSV | IR | Fast recovery diode |
| SD253N12S15MV | IR | Fast recovery diode |
| 301U160P4 | IR | Standard recovery diode |
| IRGB420U | IR | Insulated gate bipolar transistor |
| IRF1407S | IR | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0078 Ohm, ID = 100A. |
| 309UA120P3 | IR | Standard recovery diode |
| IRF7103 | IR | N-channel power MOSFET for fast switching applications, 50V, 3A |
| 309UR80 | IR | Standard recovery diode |
| SD153N16S15PV | IR | Fast recovery diode |
| SD300N08PSC | IR | Standard recovery diode |
| SD453R12S20PC | IR | Fast recovery diode |
| 309URA120 | IR | Standard recovery diode |
| 300U160YPD | IR | Standard recovery diode |
| SD40OC16C | IR | Standard recovery diode |
| IRFD110 | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 1.0 A |
| IRHN7230 | IR | HEXFET transistor |
| HFA105NH60 | IR | HEXFRED |
| ST300C04L2L | IR | Phase control thyristor |
| ST303C12HK3 | IR | Inverter grade thyristor |
| 47L40 | IR | Standard recovery diode |
| 303UR80P4 | IR | Standard recovery diode |
| SD150N08PC | IR | Standard recovery diode |
| 300UR120PD | IR | Standard recovery diode |
