| Partie n | Fabricant | Application |
|---|
| ST300C08L1L | IR | Phase control thyristor |
| IRFR024N | IR | Power MOSFET, 55V, 17A |
| 72UF20A | IR | Standard recovery diode |
| 45L80 | IR | Standard recovery diode |
| 309UR120P4 | IR | Standard recovery diode |
| IRFZ44ESTRL | IR | N-channel power MOSFET for fast switching applications, 60V, 48A |
| SD600N12MSC | IR | Standard recovery diode |
| ST3230C18R3 | IR | Phase control thyristor |
| IRHNA9064 | IR | HEXFET transistor |
| SD200OC08L | IR | Standard recovery diode |
| SD150R12MSC | IR | Standard recovery diode |
| SD203N20S10PSC | IR | Fast recovery diode |
| IR2113-2 | IR | High and low side driver |
| IRHM9230 | IR | HEXFET transistor |
| 112RKI80 | IR | Phase control thyristor |
| SD600N20MSC | IR | Standard recovery diode |
| 45LR30 | IR | Standard recovery diode |
| SD103N10S20MC | IR | Fast recovery diode |
| IRG4PC40KD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.1V @ VGE = 15V, IC = 25A |
| IRF5N3205 | IR | HEXFET power MOSFET surface mount. BVDSS = 55V, RDS(on) = 0.008 Ohm, ID = 55A |
| ST173S12MFK1 | IR | Inverter grade thyristor |
| ST333S08MFM0L | IR | Inverter grade thyristor |
| SD153N10S10PBV | IR | Fast recovery diode |
| ST280S06P1VL | IR | Phase control thyristor |
| IRGBC30K-S | IR | Insulated gate bipolar transistor |
| IRG4RC10KD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A |
| SD30OC12C | IR | Standard recovery diode |
| IRF640STRL | IR | N-channel power MOSFET for fast switching applications, 200V, 18A |
| 302UFR120YPD | IR | Standard recovery diode |
| 305UA120P2 | IR | Standard recovery diode |
