| Partie n | Fabricant | Application |
|---|
| IRFB23N20D | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.10 Ohm, ID = 24A |
| SD200N20PBC | IR | Standard recovery diode |
| 300HF120M | IR | Standard recovery diode |
| IRU1117-25CP | IR | 800mA low dropout positive fixed 2.5V regulator |
| IRFB260N | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A |
| SD203N12S20PBC | IR | Fast recovery diode |
| IRGBC20SD2 | IR | Insulated gate bipolar transistor with ultrafast soft reconery diode |
| IRKT43018 | IR | Thyristor/diode and thyristor/thyristor |
| SD203N14S20PSC | IR | Fast recovery diode |
| IRFPS40N50L | IR | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.087 Ohm, ID = 46 A |
| SD233N40S50PTC | IR | Fast recovery diode |
| 305U250P5 | IR | Standard recovery diode |
| ST300C04L3 | IR | Phase control thyristor |
| ST300C16L3L | IR | Phase control thyristor |
| 305U80P2 | IR | Standard recovery diode |
| 81RIA120M | IR | Phase control thyristor |
| IRF350 | IR | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 400V, RDS(on) = 0.300 Ohm, ID = 14A |
| IRF7501 | IR | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.135 Ohm |
| IRFBE30 | IR | HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 4.1A |
| SD303C08S10C | IR | Fast recovery diode |
| SD453R12S30PTC | IR | Fast recovery diode |
| IRHM9160 | IR | HEXFET transistor |
| SD203N14S20MC | IR | Fast recovery diode |
| JANTX2N6792 | IR | HEXFET power mosfet |
| IRCZ24 | IR | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.040 Ohm, ID = 26A. |
| CPV363MM | IR | IGBT SIP module |
| ST2600C22R0L | IR | Phase control thyristor |
| ST173S12PFK1 | IR | Inverter grade thyristor |
| 301UR120P3 | IR | Standard recovery diode |
| ST180S08M1L | IR | Phase control thyristor |
