| Partie n | Fabricant | Application |
|---|
| SD103R25S15PSC | IR | Fast recovery diode |
| SD103R14S15PBC | IR | Fast recovery diode |
| SD150N04PSC | IR | Standard recovery diode |
| IRF644STRL | IR | N-channel power MOSFET, 250V, 14A |
| ST110S16P2 | IR | Phase control thyristor |
| 45LFR10 | IR | Standard recovery diode |
| SD303C25S20C | IR | Fast recovery diode |
| SD150OC08L | IR | Standard recovery diode |
| JANTX2N6784 | IR | HEXFET power mosfet |
| IRG4RC10SD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A |
| 47LF10 | IR | Standard recovery diode |
| ST1900C48R2L | IR | Phase control thyristor |
| IR51H737 | IR | Self-oscillating half-bridge |
| SD453R12S30PSC | IR | Fast recovery diode |
| SD103N14S20PSC | IR | Fast recovery diode |
| SD103R16S15PSV | IR | Fast recovery diode |
| SD400N20PSC | IR | Standard recovery diode |
| IRFP064 | IR | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009 Ohm, ID = 70A |
| SD153R12S15PBV | IR | Fast recovery diode |
| IRFI9630G | IR | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.80 Ohm, ID = -4.3 A |
| SD153R10S10PBV | IR | Fast recovery diode |
| IRF9520NS | IR | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.8A |
| 72UFR160PD | IR | Standard recovery diode |
| ST280C04C0L | IR | Phase control thyristor |
| ST300C12L3 | IR | Phase control thyristor |
| IRFP460P | IR | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.27 Ohm, ID = 20 A |
| IRG4BC20KD-S | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A |
| ST2100C32R3L | IR | Phase control thyristor |
| PVI5013RS | IR | Photovoltaic isolator |
| IR51HD214 | IR | Self-oscillating half-bridge |
