| Partie n | Fabricant | Application |
|---|
| UF4004 | JGD | Ultra fast rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 1.0 A. |
| 1N4626D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 5.6V. 1% tolerance. |
| ZMM5225A | JGD | Surface mount zener diode. Nominal zener voltage 3.0 V. Test current 20 mA. +-3% tolerance. |
| 1N5530 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-20% tolerance. |
| SMBJ24A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 26.7 V (min), 29.5 V (max). Test current 1.0 mA. |
| 3EZ16D5 | JGD | 3 W, silicon zener diode. Nominal voltage 16 V, current 47 mA, +-5% tolerance. |
| SMBJ5946D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 75 V. Test current 5.0 mA. +-1% tolerance. |
| MMBZ5226B | JGD | Surface mount zener diode. Nominal zener voltage 3.3V, test current 20.0mA. |
| KBL401 | JGD | Single-phase 4.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 100V. |
| ZMM5239C | JGD | Surface mount zener diode. Nominal zener voltage 9.1 V. Test current 20 mA. +-10% tolerance. |
| P4KE130A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 130 V. |
| 3EZ4.3D1 | JGD | 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-1% tolerance. |
| KBPC808 | JGD | Single phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 800V. |
| 1N4102 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 8.7V. |
| 2W02 | JGD | Single phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 200 V. |
| 1A6 | JGD | 1.0 A silicon rectifier. Max recurrent peak reverse voltage 800 V. |
| SMAJ11C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 11 V. Bidirectional. |
| SMBJ5944 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 62 V. Test current 6.0 mA. +-20% tolerance. |
| 3EZ16D2 | JGD | 3 W, silicon zener diode. Nominal voltage 16 V, current 47 mA, +-2% tolerance. |
| 1N4746A | JGD | 1W zener diode. Zener voltage 18V. |
| P4KE250C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 250 V. Bidirectional. |
| SMBJ5919A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 5.6 V. Test current 66.9 mA. +-10% tolerance. |
| 1N5526B | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 6.8 V. Test current 1.0 mAdc. +-5% tolerance. |
| ZMM55-B6V8 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 6.4-7.2 V. Test current 5 mA. +-2% tolerance. |
| SMAJ150CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 150 V. Bidirectional. |
| 1N5533B | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 13.0 V. Test current 1.0 mAdc. +-5% tolerance. |
| 3EZ75D4 | JGD | 3 W, silicon zener diode. Nominal voltage 75 V, current 10 mA, +-4% tolerance. |
| 3EZ18D4 | JGD | 3 W, silicon zener diode. Nominal voltage 18 V, current 42 mA, +-4% tolerance. |
| ZMM5222C | JGD | Surface mount zener diode. Nominal zener voltage 2.5 V. Test current 20 mA. +-10% tolerance. |
| BY253 | JGD | 3.0 A silicon rectifier. Max recurrent peak reverse voltage 600 V. |
