| Partie n | Fabricant | Application |
|---|
| ZMM5260D | JGD | Surface mount zener diode. Nominal zener voltage 43 V. Test current 3 mA. +-20% tolerance. |
| P4KE43A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 43 V. |
| SMAJ30A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 30 V. |
| SMAJ11CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 11 V. Bidirectional. |
| 1N5946C | JGD | 1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-2% tolerance. |
| P6KE24 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 24 V. |
| MMBZ5255B | JGD | Surface mount zener diode. Nominal zener voltage 28.0V, test current 4.5mA. |
| KBPC1006G | JGD | Single phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 600V. |
| 1N4936 | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V. |
| 1N979 | JGD | 0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. +-20% tolerance. |
| P6KE9.1C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 9.1 V. Bidirectional. |
| 3EZ28D | JGD | 3 W, silicon zener diode. Nominal voltage 28 V, current 27 mA, +-20% tolerance. |
| 3EZ6.2D2 | JGD | 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-2% tolerance. |
| BY550-50 | JGD | 5.0 A silicon rectifier. Max recurrent peak reverse voltage 50 V. |
| 1N960D | JGD | 0.5W, silicon zener diode. Zener voltage 9.1V. Test current 14.0mA. +-1% tolerance. |
| 1N4117 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 25V. |
| HER602G | JGD | 6.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 100V. |
| SMBJ8.5CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 9.44 V (min), 10.4 V (max). Test current 1.0 mA. Bidirectional. |
| 1N5936 | JGD | 1.5 W, silicon zener diode. Zener voltage 30V. Test current 12.5 mA. +-20% tolerance. |
| ZMM5230A | JGD | Surface mount zener diode. Nominal zener voltage 4.7 V. Test current 20 mA. +-3% tolerance. |
| 1N987B | JGD | 0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. +-5% tolerance. |
| 1N5926B | JGD | 1.5 W, silicon zener diode. Zener voltage 11V. Test current 34.1 mA. +-5% tolerance. |
| 1A4G | JGD | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 400V. |
| 1N4623C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 4.3V. 2% tolerance. |
| SMBJ5934A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 24 V. Test current 15.6 mA. +-10% tolerance. |
| ZMM55-D6V2 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 5.8-6.6 V. Test current 5 mA. +-20% tolerance. |
| 1N4762C | JGD | 1W zener diode. Nominal zener voltage 82V. 2% tolerance. |
| 1N4106 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 12V. |
| MUR120 | JGD | 1.0A ultra fast rectifier. Max recurrent peak reverse voltage 200V. |
| SMAJ8.5A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 8.5 V. |
