| Partie n | Fabricant | Application |
|---|
| SF25G | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 300 V. Max average forward current 2.0 A. |
| UF4004G | JGD | Glass passivated ultra fast rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 1.0 A. |
| BZX84C22 | JGD | 350mW zener diode, 22V |
| 3EZ16D10 | JGD | 3 W, silicon zener diode. Nominal voltage 16 V, current 47 mA, +-10% tolerance. |
| 1N5947D | JGD | 1.5 W, silicon zener diode. Zener voltage 82 V. Test current 4.6 mA. +-1% tolerance. |
| SMAJ36C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 36 V. Bidirectional. |
| 3EZ62D | JGD | 3 W, silicon zener diode. Nominal voltage 62 V, current 12 mA, +-20% tolerance. |
| KBP201G | JGD | Single-phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 100V. |
| ZMM5225B | JGD | Surface mount zener diode. Nominal zener voltage 3.0 V. Test current 20 mA. +-5% tolerance. |
| SMBJ78A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 86.7 V (min), 65.8 V (max). Test current 1.0 mA. |
| 1N5928B | JGD | 1.5 W, silicon zener diode. Zener voltage 13V. Test current 28.8 mA. +-5% tolerance. |
| SMAJ7.5 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 7.5 V. |
| 3EZ62D5 | JGD | 3 W, silicon zener diode. Nominal voltage 62 V, current 12 mA, +-5% tolerance. |
| ZMM55-C20 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 18.8-21.2 V. Test current 5 mA. +-5% tolerance. |
| 3EZ4.3D10 | JGD | 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-10% tolerance. |
| ZMM5227A | JGD | Surface mount zener diode. Nominal zener voltage 3.6 V. Test current 20 mA. +-3% tolerance. |
| 3EZ33D3 | JGD | 3 W, silicon zener diode. Nominal voltage 33 V, current 23 mA, +-3% tolerance. |
| 1N5402G | JGD | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V. |
| 1N969C | JGD | 0.5W, silicon zener diode. Zener voltage 22V. Test current 5.6mA. +-2% tolerance. |
| P4KE43C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 43 V. Bidirectional. |
| SMBJ5944C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 62 V. Test current 6.0 mA. +-2% tolerance. |
| 1N4148 | JGD | Small-signal switching diode. Peak reverse voltage 100V, forward current 150mA. |
| SMBJ5955A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 180 V. Test current 2.1 mA. +-10% tolerance. |
| SMBJ22CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 24.4 V (min), 26.9 V (max). Test current 1.0 mA. Bidirectional. |
| SMBJ5927B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 12 V. Test current 31.2 mA. +-5% tolerance. |
| HER103L | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 200V. |
| P6KE8.2CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 8.2 V. Bidirectional. |
| SMBJ5913D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 3.3 V. Test current 113.6 mA. +-1% tolerance. |
| HER104G | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 300V. |
| 1N4116 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 24V. |
