| Partie n | Fabricant | Application |
|---|
| MMBV109LT1 | Leshan Radio | 30 V, silicon epicap diode |
| 1.5KE36 | Leshan Radio | 36 V, 1 mA, 1500 W, transient voltage suppressor |
| SA6.5A | Leshan Radio | 6.5 V, 10 mA, 500 W, transient voltage suppressor |
| MTZJ13B | Leshan Radio | 13 V, 5 mA, zener diode |
| BAP63-03 | Leshan Radio | 50 V, silicon PIN diode |
| 05W20 | Leshan Radio | 500 mW, 5 mA, zener diode |
| P4KE39 | Leshan Radio | 39 V, 1 mA, 400 W, transient voltage suppressor |
| HVC350B | Leshan Radio | 15 V, variable capacitance diode |
| SA7.0 | Leshan Radio | 7.0 V, 10 mA, 500 W, transient voltage suppressor |
| MM3Z10T1 | Leshan Radio | 10 V, 5 mA, 200 mW, zener voltage regulator |
| BC856BLT1 | Leshan Radio | 65 V, general purpose transistor |
| MSD1328-RT1 | Leshan Radio | 25 V, NPN low voltage output amplifier - surface mount |
| MMBTH10LT1 | Leshan Radio | 25 V, VHF/UHF transistor |
| P4KE7.5 | Leshan Radio | 7.5 V, 10 mA, 400 W, transient voltage suppressor |
| P4KE350 | Leshan Radio | 350 V, 1 mA, 400 W, transient voltage suppressor |
| MC74VHC1G02DTT3 | Leshan Radio | 2-input NOR gate |
| MUN2134T1 | Leshan Radio | 50 V, bias resistor transistor |
| FR257 | Leshan Radio | 1000 V, 2.5 A, fast recovery diode |
| 1N5406G | Leshan Radio | 1000 V, 3 A, general purpose GPP diode |
| BZX84C16LT1 | Leshan Radio | 16 V, 225 mW, semiconductor |
| 05WS5C | Leshan Radio | 400 mW, 5 mA, zener diode |
| 05WS16 | Leshan Radio | 400 mW, 5 mA, zener diode |
| MMUN2114LT1 | Leshan Radio | 50 V, bias resistor transistor |
| FF7 | Leshan Radio | 1000 V, 1 A, fast recovery SMA diode |
| HER104 | Leshan Radio | 300 V, 1 A, high efficiency diode |
| UF4006 | Leshan Radio | 800 V, super fast diode |
| SA13A | Leshan Radio | 13 V, 1 mA, 500 W, transient voltage suppressor |
| 1N4007 | Leshan Radio | 1000 V, 1 A general diode |
| 1N974B | Leshan Radio | 36 V, zener diode |
| 05W36 | Leshan Radio | 500 mW, 2 mA, zener diode |
