| Partie n | Fabricant | Application |
|---|
| MUN5313DW1T1 | Leshan Radio | 50 V, dual bias resistor transistor |
| 1N4744A | Leshan Radio | 15 V, zener diode |
| 1.5KE10 | Leshan Radio | 10 V, 1 mA, 1500 W, transient voltage suppressor |
| 1N5254A | Leshan Radio | 27 V, 4.6 mA, zener diode |
| 1N5230A | Leshan Radio | 4.7 V, 20 mA, zener diode |
| 1N4751B | Leshan Radio | 30 V, zener diode |
| BC857BWT1 | Leshan Radio | 45 V, general purpose transistor |
| P4KE150 | Leshan Radio | 150 V, 1 mA, 400 W, transient voltage suppressor |
| BZX84C62LT1 | Leshan Radio | 62 V, 225 mW, semiconductor |
| MMBZ5240BLT1 | Leshan Radio | 10 V, 20 mA, 225 mW, semiconductor |
| 1N992A | Leshan Radio | 200 V, zener diode |
| P4KE68A | Leshan Radio | 68 V, 1 mA, 400 W, transient voltage suppressor |
| 1N746C | Leshan Radio | 3.3 V, 20 mA, zener diode |
| MMBZ5261BLT1 | Leshan Radio | 47 V, 2.7 mA, 225 mW, semiconductor |
| MMBV809LT1 | Leshan Radio | 20 V, silicon tuning diode |
| BAS21LT1 | Leshan Radio | 250 V, 200 mA, high voltage switching diode |
| 1N5252C | Leshan Radio | 24 V, 5.2 mA, zener diode |
| SF13 | Leshan Radio | 150 V, 1 A, super fast diode |
| 1N5398 | Leshan Radio | 800 V, 1.5 A general diode |
| SMAJ33A | Leshan Radio | 33 V, 1 mA, transient voltage suppressor |
| MMBZ5222BLT1 | Leshan Radio | 2.5 V, 20 mA, 225 mW, semiconductor |
| FR152 | Leshan Radio | 100 V, 1.5 A, fast recovery diode |
| MUN2234RT1 | Leshan Radio | 50 V, bias resistor transistor |
| 1N4001G | Leshan Radio | 50 V, 1 A, general purpose GPP diode |
| RBV408G | Leshan Radio | 800 V, 4 A, bridge rectifier |
| MC74VHC1G01DFT4 | Leshan Radio | 2-input NAND gate |
| 1N4743A | Leshan Radio | 13 V, zener diode |
| 1N4003E | Leshan Radio | 200 V, 1 A general diode |
| 1N746A | Leshan Radio | 3.3 V, 20 mA, zener diode |
| 1N5272C | Leshan Radio | 110 V, 1.1 mA, zener diode |
